Title :
High temperature (400°C) performance of ohmic contacts to n-type GaN and GaAs
Author :
Chern, Jehn-Huar ; Sadwick, Laurence P. ; Hwu, R. Jennifer
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
Stable high temperature ohmic contacts to III-V semiconductor materials are still rather problematic. In this work we report results on thermodynamically stable ohmic contacts to n-type Ga-V semiconductor materials (e.g., GaN and GaAs) that are capable of withstanding prolonged 400°C exposure in untreated air ambient
Keywords :
III-V semiconductors; ageing; annealing; contact resistance; gallium arsenide; gallium compounds; ohmic contacts; semiconductor device metallisation; semiconductor epitaxial layers; semiconductor-metal boundaries; thermal stability; 400 C; Au-TiW-Cu3Ge-GaAs; Cu3Ge-GaN; III-V semiconductor materials; PdAl-GaN; TiAl-GaN; high temperature performance; n-type GaAs; n-type GaN; ohmic contacts; stable high temperature contacts; Aging; Annealing; Contact resistance; Doping; Gallium arsenide; Gallium nitride; Gold; Ohmic contacts; Temperature; Thermal stability;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676771
