Stability of W and Re contacts to GaN

Author

Gaser, S.M. ; Nicolet, M.A. ; Kolawa, K. ; Ruiz, R.

Author_Institution

California Inst. of Technol., Pasadena, CA, USA

fYear

1998

Firstpage

128

Lastpage

133

Abstract

The thermal stability of W and Re metal contacts to GaN upon vacuum thermal annealing at 600, 800 and 1000°C for 30 min is investigated by means of 2.0 MeV He⁺⁺ backscattering spectrometry, X-ray diffractometry and scanning electron microscopy. No reaction with GaN could be detected for either W or Re after any time-temperature cycle applied. The instability induced by the dissociation of GaN imposes an upper practical limit for the duration of vacuum heat treatment of tungsten or rhenium metal contacts to GaN of about 30 min at 800°C

Keywords

III-V semiconductors; X-ray diffraction; annealing; gallium compounds; particle backscattering; rhenium; scanning electron microscopy; semiconductor-metal boundaries; thermal stability; tungsten; wide band gap semiconductors; 600 to 1000 C; GaN; GaN-Re; GaN-W; He⁺⁺ backscattering spectrometry; X-ray diffractometry; metal contact; scanning electron microscopy; thermal stability; time-temperature cycling; vacuum thermal annealing; Annealing; Backscatter; Gallium nitride; Heat treatment; Helium; Scanning electron microscopy; Spectroscopy; Thermal stability; Tungsten; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676773

Filename

676773