DocumentCode
1586650
Title
Interconnection technology for new wide band gap semiconductors
Author
Cyrille, Duchesne ; Philippe, Cussac ; Xavier, Cleon
Author_Institution
CIRTEM, Tarbes, France
fYear
2013
Firstpage
1
Lastpage
10
Abstract
The aim of this works is to present the interconnection technology bump that allows a double side cooling for power modules. Research will focus on pushing the limits necessitated by the increase of power density on the components to ensure optimum integration. We present design principles, electrical characteristics and thermal gains obtained by the use of this technology.
Keywords
cooling; integrated circuit interconnections; modules; power integrated circuits; wide band gap semiconductors; double side cooling; electrical characteristics; interconnection technology bump; power density; power integrated circuit; power modules; thermal design principles; thermal gains; wide band gap semiconductors; Assembly; Metallization; Multichip modules; Substrates; Hybrid power integration; Packaging; Power integrated circuit; Thermaldesign; wide band gap devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634619
Filename
6634619
Link To Document