Title :
Analysis of self-heating effects on partially depleted silicon on aluminum nitride MOSFETs
Author :
Osman, Mohamed A. ; Osman, Ashraf A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Abstract :
The electrical and thermal properties of silicon on aluminum nitride MOSFETs were investigated using two dimensional numerical simulation. The high thermal conductivity of AlN allows heat flow to the substrate at rates similar or higher than bulk silicon. The simulations reveal a thermal distribution similar to bulk MOSFET, no negative conductance, and no reduction in saturation current compared to conventional SOI MOSFET
Keywords :
MOSFET; aluminium compounds; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; thermal conductivity; 2D numerical simulation; SOI MOSFET; Si-AlN; electrical properties; heat flow; saturation current; self-heating effects; thermal conductivity; thermal distribution; thermal properties; Aluminum nitride; Computer science; Dielectric substrates; Dielectrics and electrical insulation; Doping; Heating; MOSFETs; Silicon; Temperature dependence; Thermal conductivity;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676782
