DocumentCode
1586675
Title
Analysis of self-heating effects on partially depleted silicon on aluminum nitride MOSFETs
Author
Osman, Mohamed A. ; Osman, Ashraf A.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fYear
1998
Firstpage
169
Lastpage
171
Abstract
The electrical and thermal properties of silicon on aluminum nitride MOSFETs were investigated using two dimensional numerical simulation. The high thermal conductivity of AlN allows heat flow to the substrate at rates similar or higher than bulk silicon. The simulations reveal a thermal distribution similar to bulk MOSFET, no negative conductance, and no reduction in saturation current compared to conventional SOI MOSFET
Keywords
MOSFET; aluminium compounds; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; thermal conductivity; 2D numerical simulation; SOI MOSFET; Si-AlN; electrical properties; heat flow; saturation current; self-heating effects; thermal conductivity; thermal distribution; thermal properties; Aluminum nitride; Computer science; Dielectric substrates; Dielectrics and electrical insulation; Doping; Heating; MOSFETs; Silicon; Temperature dependence; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676782
Filename
676782
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