Title :
Monitoring of heavy metals in as-implanted SIMOX with surface photovoltage
Author :
Jastrzebski, L. ; Soydan, R.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Summary form only given. Surface photovoltage (SPV) was used successfully to measure the iron concentration in as-implanted SIMOX (separation by implanted oxygen) materials. An initial correlation has been established between diffusion lengths measured on the back of SIMOX wafers and Fe concentration measured by SIMS (secondary ion mass spectrometry) and spark source in as-implanted SIMOX films. The SPV measurements are quick, nondestructive, and do not require any additional sample preparation. Therefore, they could be used easily as a quality control method to monitor heavy metals in as-implanted SIMOX layers
Keywords :
ion implantation; nondestructive testing; quality control; semiconductor technology; Fe concentration; NDE; NDT; SIMS; SPV measurements; Si-SiO2-Si; as-implanted SIMOX films; as-implanted SIMOX layers; diffusion lengths; heavy metals monitoring; monitor heavy metals; nondestructive measurement; process control; quality control method; secondary ion mass spectrometry; separation by implanted oxygen; spark source; surface photovoltage measurements; Calibration; Contamination; Impurities; Ion beams; Iron; Length measurement; Monitoring; Pollution measurement; Semiconductor device modeling; Sparks;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95402
