DocumentCode :
1586741
Title :
Ceramic dielectric performance under high temperature life test
Author :
Day, Jeff ; Roach, Michael ; Maxwell, John
Author_Institution :
KD Components, USA
fYear :
1998
Firstpage :
181
Lastpage :
183
Abstract :
Requirements for high temperature components have increasing dramatically in the past few years as more electronics are moving under the hood and onto automobile manifolds, mechanical controls on aircraft are being replaced by electronics and industrial process controls are moving closer to the process. Advances in semiconductors and materials are now setting the pace driving electronics to higher temperatures. New passive component materials are required to achieve reliable performance to support those electronic modules. In the past standard NPO and X7R dielectric ceramic capacitors have been characterized for high temperature applications. Increased dielectric thickness and aggressive voltage de-rating are also used to adapt traditional materials for high temperature operations. New ceramic dielectrics are now required for reliable high temperature operation. A high K material formulated for high temperature operation life test and performance characteristics to 300°C is described. Temperature and voltage coefficient and insulation resistance performance is discussed. Failure modes during life testing are reviewed. Different lead attachment techniques and results are reviewed to temperatures of 300°C
Keywords :
ceramic capacitors; ceramics; dielectric materials; failure analysis; high-temperature electronics; life testing; permittivity; 300 C; NPO capacitor; X7R capacitor; ceramic dielectric material; dielectric constant; electronic module; failure mode; high temperature component; insulation resistance; life testing; temperature coefficient; voltage coefficient; Aerospace electronics; Aerospace materials; Automotive materials; Ceramics; Dielectric materials; High K dielectric materials; Industrial electronics; Life testing; Semiconductor materials; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
Type :
conf
DOI :
10.1109/HITEC.1998.676785
Filename :
676785
Link To Document :
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