Title :
Thermal measurement of losses of GaN power transistors for optimization of their drive
Author :
Hoffmann, Lionel ; Gautier, Cyrille ; Lefebvre, Serge ; Costa, Francois
Author_Institution :
SATIE, ENS Cachan, Cachan, France
Abstract :
In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever.
Keywords :
III-V semiconductors; driver circuits; heat conduction; loss measurement; optimisation; power field effect transistors; semiconductor device measurement; thermal variables measurement; GaN; dead-times; drive optimization; eGaN-FET power transistor; load current; reverse conduction; thermal loss measurement; thermal measurement method; Current measurement; Gallium nitride; Loss measurement; Solid modeling; Temperature measurement; Transistors; Voltage measurement; Gallium nitride; High frequency power converter; Power semiconductor device; Switching losses; Wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634623
