DocumentCode :
1586793
Title :
High-temperature storage and thermal cycling studies of Heraeus-Cermalloy thick film and Dale power wirewound resistors
Author :
Naefe, Jeffrey E. ; Johnson, R. Wayne ; Grzybowski, Richawrd R.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
fYear :
1998
Firstpage :
191
Lastpage :
206
Abstract :
In this work, the high temperature testing of power wirewound and thick film resistors is reported. The resistance values of the Dale power wirewound resistors tested were 1 Ω, 100 Ω, and 10 kΩ with rated power levels of 5 W and 25 W. Stability with long term storage (10000 hrs) at 300°C has been measured for the wirewound resistors unpowered and powered at 20% of rated power. The Dale resistors have also completed 1000 thermal cycles with a temperature range from -55°C to 225°C. Additionally TCR measurements were performed on these resistors. Three 900 Series thick film resistor pastes from Heraeus-Cermalloy were studied: 100 Ω/□, 1 KΩ/□, 10 KΩ/□. The temperature coefficient of resistance (TCR) was measured from 27°C to 500°C in 50°C increments. A 2×2 matrix of variables was included in the 300°C storage test: untrimmed resistors, resistors trimmed up 50% in value, unpowered, and powered at 1/8 W. Palladium/Silver was the initial termination choice for these 300°C studies, but silver migration quickly became a problem. Gold terminated Heraeus-Cermalloy resistors were manufactured and have completed over 4500 hours of storage at 300°C
Keywords :
high-temperature electronics; power electronics; thick film resistors; -55 to 225 C; 1 kohm; 1 ohm; 100 ohm; 27 to 500 C; 300 C; 5 to 25 W; Dale power wirewound resistor; Heraeus-Cermalloy thick film resistor; TCR; high temperature storage; life testing; stability; thermal cycling; Electrical resistance measurement; Power measurement; Resistors; Silver; Stability; Temperature; Testing; Thermal resistance; Thermal variables measurement; Thick films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
Type :
conf
DOI :
10.1109/HITEC.1998.676787
Filename :
676787
Link To Document :
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