Title :
High-temperature characterization of high-voltage MOSFETs fabricated in a 0.51 μm CMOS process
Author :
Ouyang, Xiaolin ; Osman, Ashraf A. ; Mojarradi, Mohammad
Author_Institution :
Washington State Univ., USA
Abstract :
Temperature characterization results for a set of high-voltage N-channel and P-channel MOSFETs compatible with a 3.3 V 0.5 μm standard CMOS process are presented for temperatures between 27°C-200°C. Threshold voltage, low field mobility, mobility degradation with transverse electric field, and breakdown voltage temperature dependence are extracted using simple empirical functions. The drain current of the NMOS device was found to exhibit Zero-Temperature-Coefficient (ZTC) bias points in the linear and saturation region. No similar behavior was observed for the PMOS which is attributed to a large internal series resistance. Devices exhibit breakdown voltages of 26 V for the NMOS and 18 V for the PMOS device
Keywords :
CMOS integrated circuits; MOSFET; characteristics measurement; semiconductor device measurement; 0.5 mum; 18 V; 26 V; 27 to 200 C; 3.3 V; NMOS device; PMOS; Zero-Temperature-Coefficient bias points; breakdown voltage temperature dependence; breakdown voltages; drain current; high-voltage MOSFET; internal series resistance; linear region; low field mobility; mobility degradation; saturation region; standard CMOS; threshold voltage; transverse electric field; Analog circuits; Breakdown voltage; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; Degradation; MOS devices; MOSFETs; Temperature dependence; Threshold voltage;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676791
