DocumentCode
1587021
Title
SiC-AlN structure based MEMS
Author
Korlyakov, A.V. ; Luchinin, V.V.
Author_Institution
Microtechnol. Centre, St. Petersburg State Electrotech. Univ., Russia
fYear
1998
Firstpage
250
Lastpage
252
Abstract
To obtain a SiC-based MEMS, we proposed using the epitaxial SiC-AlN structure which offers the best possible compatibility (both in crystal microchemistry and in thermomechanics). Our experience in depositing either AlN or SiC films on to large-size foreign material substrates and selective etching (dry or wet) of SiC and AlN made it possible to form the gyroscopic structure based on a 4 micron-thick cellular SiC membrane with the spatial resolution as low as at least 3 micron
Keywords
etching; micromechanical devices; semiconductor epitaxial layers; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; 4 micron; AlN; MEMS; SiC-AlN; crystal microchemistry; gyroscopic structure; large-size foreign material substrates; selective etching; spatial resolution; thermomechanics; Biological materials; Biomembranes; Crystalline materials; Dry etching; Micromechanical devices; Silicon carbide; Spatial resolution; Substrates; Thermomechanical processes; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676797
Filename
676797
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