An aluminum nitride package for 600°C and beyond

Author

Savrun, Ender ; Toy, C.

Author_Institution

Sienna Technol. Inc., Woodinville, WA, USA

fYear

1998

Firstpage

265

Lastpage

268

Abstract

An aluminum nitride (AlN) based package was developed for use at temperatures up to 600°C. AlN substrates were metallized with thick film refractory molybdenum (Mo) and with thin film refractory tungsten (W). The thick film Mo metallization was subsequently plated with nickel and gold, while thin film W was plated with gold. The sheet resistivities of the thick film Mo and thin film W metallizations were 0.025 ohms/□ and 4.5 ohms/□, respectively. The pull strengths of both metallizations were greater than 10 ksi. Four brazing alloys were investigated for attaching SiC die to metallized AlN substrate. The chemical compatibility of various bond pad materials with the metallizations were studied up to 900°C

Keywords

aluminium compounds; high-temperature electronics; integrated circuit packaging; metallisation; microassembling; 0 to 600 degC; 0 to 900 degC; AlN-Mo; AlN-W; bond pad materials; brazing alloys; chemical compatibility; die attach; package; pull strengths; sheet resistivities; Aluminum nitride; Gold; Metallization; Nickel; Packaging; Substrates; Temperature; Thick films; Transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676801

Filename

676801