Title :
Evaluation of 600V GaN and SiC Schottky diodes at different temperatures
Author :
Badawi, Nasser ; Bahat-Treidel, E. ; Dieckerhoff, Sibylle ; Hilt, O. ; Wurfl, Joachim
Author_Institution :
Power Electron. Res. Group, Tech. Univ. of Berlin, Berlin, Germany
Abstract :
This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated at different temperatures and compared to a commercially available 600V/2A Silicon Carbide (SiC) Schottky diode. The test for both diodes is carried out under identical conditions. The proposed GaN diode shows very good switching properties and the potential to operate at very high switching frequencies and high temperatures with low switching loss.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; silicon compounds; wide band gap semiconductors; GaN; Schottky diodes; SiC; current 2 A; dynamic characteristics; high temperatures; low switching loss; static characteristics; very high switching frequencies; voltage 600 V; Current measurement; Gallium nitride; Schottky diodes; Silicon carbide; Temperature measurement; Voltage measurement; Device Characterisation; Gallium Nitride (GaN); Schottky Diode; Wide Bandgap Devices;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634641
