High-temperature mixed-signal ICs using silicon carbide CMOS technology

Author

Chen, Jian-Song ; Ryu, Sei-Hyung ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1998

Firstpage

292

Lastpage

295

Abstract

The design and fabrication of a high-temperature mixed-signal IC using silicon carbide CMOS technology is presented. The mixed-signal IC implements an intelligent gate driver circuit intended for high-power switching devices. Using temperature-insensitive comparator, several functions including over-voltage, under-voltage, short-load and open-load detection are provided, all of which are operational up to 300°C. These ICs are ideally suited for harsh, high-temperature environments such as automotive and aircraft engines

Keywords

CMOS integrated circuits; comparators (circuits); driver circuits; high-temperature electronics; mixed analogue-digital integrated circuits; power integrated circuits; silicon compounds; wide band gap semiconductors; SiC; aircraft engine; automotive engine; harsh environment; high-power switching device; high-temperature mixed-signal IC; intelligent gate driver circuit; open-load; over-voltage; short-load; silicon carbide CMOS technology; temperature-insensitive comparator; under-voltage; Aircraft propulsion; Aluminum; Boron; CMOS technology; Driver circuits; Intelligent sensors; Protection; Silicon carbide; Temperature sensors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676806

Filename

676806