• DocumentCode
    1587306
  • Title

    Investigation of high temperature effects on MOSFET transconductance (gm)

  • Author

    Osman, Ashraf A. ; Osman, Mohamed A.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
  • fYear
    1998
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    High temperature effects on CMOS transconductance (gm) are investigated in linear and saturation regions. Measured gm in the saturation region at temperatures between 27-200°C were observed to intersect at one gate bias point. However, no such point was observed in the linear region. Similar characteristics was produced using analytical MOSFET current model that incorporate temperature dependence of device parameters
  • Keywords
    MOSFET; high-temperature effects; semiconductor device models; CMOS transconductance; MOSFET transconductance; analytical MOSFET current model; device parameters; gate bias point; high temperature effects; linear region; linear regions; saturation regions; temperature dependence; Analog circuits; Circuit simulation; Degradation; MOSFET circuits; Robust stability; SPICE; Semiconductor device modeling; Temperature dependence; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676808
  • Filename
    676808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1587306