Title :
Transient robustness testing of silicon carbide (SiC) power MOSFETs
Author :
Fayyaz, Asad ; Li Yang ; Castellazzi, Alberto
Author_Institution :
Power Electron., Machines & Control Group, Univ. of Nottingham, Nottingham, UK
Abstract :
This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical mechanisms. An electro-thermal device model is used to support the experimental analysis and interpret the observations.
Keywords :
power MOSFET; semiconductor device models; semiconductor device testing; silicon compounds; transient analysis; wide band gap semiconductors; SiC; UIS; electrothermal device model; physical mechanisms; short-circuit withstand capability; silicon carbide power MOSFET; transient robustness testing; unclamped inductive switching; unified test set-up; Logic gates; MOSFET; Performance evaluation; Robustness; Silicon carbide; Switches; Testing; Device characterization; MOSFET; Power semiconductor device; Robustness; Silicon Carbide (SiC); Wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634645
