• DocumentCode
    1587334
  • Title

    New result in 6H SiC “site-competition” epitaxy

  • Author

    Zelenin, Viktor V. ; Lebedev, A.A. ; Rastegaeva, Marina G. ; Davydov, Denis V. ; Chelnokov, Valentin E.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • fYear
    1998
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    In this work we report on an investigation of 6H-SiC epitaxial layers grown by using atmospheric pressure CVD with a CH4-SiH 4-H2 gas system. The epilayers are characterised by volt-capacitance measurements and preliminary results of i-DLTS spectroscopy
  • Keywords
    deep level transient spectroscopy; electrical conductivity; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 6H-SiC epitaxial layer; SiC; atmospheric pressure CVD growth; i-DLTS spectroscopy; site-competition epitaxy; volt-capacitance measurement; Argon; Capacitance-voltage characteristics; Conductivity; Epitaxial growth; Epitaxial layers; Gases; Inductors; Semiconductor device doping; Silicon carbide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676809
  • Filename
    676809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1587334