Title :
(SiC)1-x(AlN)x solid solutions-new materials of high-temperature electronics
Author :
Safaraliev, G.K. ; Nurmagomedov, S.A. ; Kurbanov, M.K. ; Ofitcerova, N.V.
Author_Institution :
Daghestan State Univ.
Abstract :
The study of electrical and luminescent properties of heterostructure on the basis of (SiC)1-x(AlN)x solid solutions are discussed in this article
Keywords :
aluminium compounds; high-temperature electronics; photoluminescence; silicon compounds; solid solutions; (SiC)1-x(AlN)x solid solutions; SiC-AlN; electrical properties; heterostructure; high-temperature electronics; luminescent properties; photoluminescence; Charge carriers; Current density; Heterojunctions; Leakage current; Silicon carbide; Solids; Temperature dependence; Temperature measurement; Tunneling; Voltage;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676811
