Title :
Silicon carbide as a material for high temperature posistors
Abstract :
Elaboration of silicon carbide based material with a positive temperature coefficient of resistance (PTC) sufficient for operation as a posistor is possible using heteropolytype transitions with abrupt change of electrophysical properties. Material for high-temperature posistors with PTC values in the range 0.03-0.10 K-1 and working temperatures 300-1000°C is obtained
Keywords :
high-temperature electronics; resistors; silicon compounds; 300 to 1000 C; SiC; electrophysical properties; heteropolytype transitions; high temperature posistors; high-temperature posistors; positive temperature coefficient of resistance; silicon carbide; working temperatures; Annealing; Ceramics; Conductivity; Furnaces; Microelectronics; Phase change materials; Powders; Silicon carbide; Temperature dependence; Temperature distribution;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676812
