SiC device new technology

Author

Gerasimov, A.B. ; Bibilashvili, A.P. ; Bokolochadze, Z.G. ; Kazarov, R.E. ; Samadashvili, Z.D. ; Svimonishvili, T.V. ; Vepkhvadze, M.T. ; Ukhin, N.A.

Author_Institution

Tbilisi State Univ.

fYear

1998

Firstpage

320

Lastpage

321

Abstract

SiC is known to be quite a perspective material for high-temperature electronics. However the disadvantage is the high temperature and the complexity of device formation technological process in comparison with Si. So the simplification of technology proves to be actual. This abstract presents information on our new low temperature technology for electronic devices on SiC without multilayer epitaxy. We studied the process of photostimulated diffusion, annealing and other processes used in semiconductor device technology. This brought to technology of ohmic contacts, Schottky barriers, p-n junction and MOS structures on SiC. The results witness that low temperature technology proposed can be successfully used for SiC MESFET and MOSFET devices

Keywords

MIS structures; MOSFET; Schottky barriers; Schottky gate field effect transistors; ohmic contacts; p-n junctions; semiconductor technology; silicon compounds; MOS structures; Schottky barriers; SiC MESFET devices; SiC MOSFET devices; SiC device new technology; annealing; device formation technological process; high-temperature electronics material; low temperature technology; ohmic contacts; p-n junction; photostimulated diffusion; semiconductor device technology; Annealing; Epitaxial growth; MESFETs; Nonhomogeneous media; Ohmic contacts; P-n junctions; Schottky barriers; Semiconductor devices; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676813

Filename

676813