Title :
Metal-arc-plasma ion implantation of materials used in aerospace applications
Author :
Ueda, M. ; Dallaqua, R.S. ; Rossi, J.O. ; Tan, I.H. ; Abramof, E. ; Beloto, A.F. ; Del Bosco, E.
Author_Institution :
Associated Plasma Lab., Nat. Inst. for Space Res., Sao Jose Dos Campos, Brazil
Abstract :
Ion implantation is a well-known technique used in surface treatment of materials. During the 80´s ion implantation using a sample immersed in an ionized gaseous medium (known as plasma immersion ion implantation) revealed to be an alternative to the conventional ion beam implantation. However the further development of this non-conventional surface processing using metallic ion species has been hampered until recently when metal vacuum arc sources have filled this need. This new option opened a broad range of applications for ion implantation, including the treatment of aerospace materials for prolonging their lifetime. In this paper we present the experimental results obtained on Si wafers used as tests targets, using metallic arc ion implantation. Therefore high-density plasmas (approximately 10/sup 13/ cm/sup -3/) with a high ionization rate (on the order of 50%) made of Aluminum vapor arcs (30-70 V/200-700 A) are used for the metallic implantation process.
Keywords :
ion implantation; plasma materials processing; silicon; vacuum arcs; 200 to 700 A; 30 to 70 V; Al vapor arcs; Si; Si wafers; aerospace applications; aerospace materials; high-density plasmas; ionization rate; ionized gaseous medium; materials; metal vacuum arc sources; metal-arc-plasma ion implantation; metallic implantation; metallic ion species; nonconventional surface processing; plasma immersion ion implantation; surface treatment; Aerospace materials; Aerospace testing; Inorganic materials; Ion beams; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Surface treatment; Vacuum arcs;
Conference_Titel :
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7120-8
DOI :
10.1109/PPPS.2001.1001926