Title :
Silicon on SiO2 by two step thermal bonding (TSTB) process
Author :
Xiao-Li, Xu ; Juan, Zhan ; Qin-Yi, Tong
Author_Institution :
Microelectron. Center, Nanjing Inst. of Technol., China
Abstract :
The bonding process and mechanism and the electrical and material properties of the Si on SiO2 substrate produced by two-step thermal bonding technology are described. Experimental results on the relation between fracture strength and treatment temperature are reported. They show that the bonding process consists of two main steps. The first step is a low-temperature initial bonding process in which polymerization of silanol bonds occurs. The second step is a high-temperature process (900-1250°C) in which the mutual-diffusion process acts as the primary means of grain boundary rearrangement and void elimination. The mating surface contact area grows to a large fraction of bonding area, which increases the fracture strength greatly. The experiments show that the process can be applied to other semiconductors and insulators, such as GaAs, quartz, and silicon nitride
Keywords :
elemental semiconductors; semiconductor technology; semiconductor-insulator boundaries; silicon; silicon compounds; 900 to 1250 C; GaAs; SOI; Si on SiO2 substrate; Si-SiO2; Si3N4; TSTB; bonding process; fracture strength; grain boundary rearrangement; high-temperature process; insulators; low-temperature initial bonding process; material properties; mating surface contact area; mutual-diffusion process; polymerization; quartz; semiconductors; silanol bonds occurs; treatment temperature; two step thermal bonding; two-step thermal bonding technology; void elimination; wafer bonding; Bonding processes; Gallium arsenide; Grain boundaries; Insulation; Material properties; Polymers; Silicon; Substrates; Surface cracks; Temperature;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95406
