A fully-scalable de-embedding method for on-wafer S-parameter characterization of CMOS RF/microwave devices [MOSFET example]

An accurate and efficient de-embedding method for on-wafer device measurements at RF/microwave frequencies is presented. This method is based on transmission-line theory and does not require any physical equivalent-circuit model for external parasitic components. The propagation constant and characteristic impedance of the "THRU" dummy structure were determined to create scalable interconnect parameters for the parasitic networks connected to the three terminals of a MOSFET. Compared with the conventional scalable de-embedding method, the proposed procedure can further eliminate the unwanted parasitics from the source terminal. The performance of this new method was also validated by comparison with the "open-short" de-embedding technique.