SiC/GaN power semiconductor devices inter-electrode capacitances characterization based on multiple current probes

The characterization of voltage-dependent capacitances of power semiconductor devices is very important for modeling their dynamic performances. A measurement method using multiple current probes has been proposed to characterize inter-electrode capacitances of power devices. The advantage of this method is that it can isolate the measurement devices from the high-voltage DC bias power source. This method has been validated first on SiC JFET to obtain more capacitance dependency information both on high voltage of V_DS and on V_GS, of which the latter is not included in datasheet. It is then applied on GaN HEMT, to prove its sensibility for a few picofarads capacitances measurement.