Title :
A 5.4-mW LNA using 0.35- μm SiGe BiCMOS technology for 3.1-10.6-GHz UWB wireless receivers
Author :
Tsai, Ming-Da ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A modified low-power and low-noise distributed amplifier for ultra-wideband (UWB) radio systems is first proposed to overcome the bottleneck of conventional DA. The UWB LNA achieves 10-dB gain with 5.4-mW power consumption, and 3-dB roll-off up to 10.6 GHz. The measured noise figures are lower than 5.5 dB from 3.1 to 10.6 GHz with 1.5 V supply. The output P1dB is -5.8 dBm and input IP3 is -4 dBm from 1.5-V supply. The MMIC occupies total chip size of only 0.47 mm2 including all testing pads.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; distributed amplifiers; integrated circuit design; power consumption; radio receivers; ultra wideband communication; 0.35 micron; 1.5 V; 10 dB; 3.1 to 10.6 GHz; 5.4 mW; BiCMOS technology; LNA designs; MMIC; SiGe; UWB wireless receivers; chip size; distributed amplifier; gain; noise figures; power consumption; roll-off; ultra-wideband communication systems; BiCMOS integrated circuits; Distributed amplifiers; Energy consumption; Germanium silicon alloys; Noise figure; Noise measurement; Receivers; Semiconductor device measurement; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489802
