Title :
A 3.1-10.6 GHz RF front-end for multiband UWB wireless receivers
Author :
Bo Shi ; Chia, M.Y.W.
Author_Institution :
Inst. for Infocomm Res., Singapore, Singapore
Abstract :
The paper describes the design of a 3.1-10.6 GHz RF front-end that consists of a wideband low-noise amplifier (LNA), a single-ended-to-differential converter, and two double-balanced mixers for quadrature downconversion. Targeted for multiband UWB wireless applications, the designed RF front-end chip was fabricated in a 0.25-μm SiGe BiCMOS technology. Assembled in a low-cost 24-lead LPCC package and mounted on a high-frequency ceramic printed circuit board, the front-end delivered 20.6-21.8 dB of power gain and 4.1-6.2 dB of double-sideband noise figure over the entire 3.1-10.6 GHz UWB frequency band, respectively, and achieved an input third-order intercept point (IIP3) of -12.7 dBm at 3.3 GHz. The measured current consumption was 31 mA from a 2.7 V supply.
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; electric current; integrated circuit design; radio receivers; ultra wideband technology; wideband amplifiers; 0.25 micron; 2.7 V; 20.6 to 21.8 dB; 3.1 to 10.6 GHz; 31 mA; 4.1 to 6.2 dB; RF front-end; SiGe; current consumption; double-balanced mixers; double-sideband noise figure; high-frequency ceramic printed circuit board; input third-order intercept point; multiband UWB wireless receivers; power gain; quadrature downconversion; radio receiver; silicon-germanium BiCMOS technology; single-ended-to-differential converter; wideband low-noise amplifier; Assembly; BiCMOS integrated circuits; Ceramics; Gain; Germanium silicon alloys; Low-noise amplifiers; Packaging; Printed circuits; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489804
