Title :
High power density InGaP PHEMTs for 26 V operation
Author :
Lan, E. ; Green, B.M. ; Li, P. ; Hartin, O. ; Fisher, P. ; Maurer, D. ; Piel, P.M. ; Knappenberger, B. ; Hooper, R. ; Baca, M. Cde ; Miller, M. ; Weitzel, C.E.
Author_Institution :
Microwave & Mixed Signal Technol. Lab., Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
This paper presents a high power density and high efficiency InGaP barrier PHEMT technology for 26 V operation. This device was evaluated for 3G infrastructure applications at 2.14 GHz and WiMAX applications at 3.5 GHz. At 2.14 GHz, under a two carrier WCDMA signal, a 32.4 mm packaged device delivered 10 W average power with 11.4 dB gain and 31.4% drain efficiency at -37 dBc IM3. At 3.5 GHz, under CW stimulus, a 14.4 mm device generated an output power of 22 W with associated drain efficiency of 56% and gain of 10.2 dB.
Keywords :
3G mobile communication; III-V semiconductors; gallium compounds; indium compounds; microwave power transistors; power HEMT; 10 W; 10.2 dB; 11.4 dB; 14.4 mm; 2.14 GHz; 22 W; 26 V; 3.5 GHz; 31.4 percent; 32.4 mm; 3G radio; 56 percent; CDMA; CW input stimulus; InGaP; WiMAX; drain efficiency; high efficiency barrier PHEMT; high power density PHEMT; microwave power FET; power amplifiers; two carrier WCDMA signal; FETs; Gain; Gallium arsenide; HEMTs; Microwave devices; Microwave technology; Multiaccess communication; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489815
