A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE

Author

Mazzanti, A. ; Larcher, L. ; Brama, R. ; Svelto, F.

Author_Institution

DII, Univ. of Modena & Reggio Emilia, Italy

fYear

2005

Firstpage

425

Lastpage

428

Abstract

The design of CMOS power amplifiers (PA) is still a challenging issue. Efficiency is one of the key requirements, but it is usually obtained at the expense of large device stress. The latter can be reduced by introducing a cascode solution, which features an efficiency penalty due to dissipative mechanisms associated with MOS capacitive parasitics, overlooked up to date. A class-E PA is proposed which allows simultaneously high efficiency and reduced stress by means of an integrated inductor tuning out the parasitic. Prototypes, realized in a 0.13 μm CMOS technology, demonstrate 67% PAE while delivering 23 dBm peak power at 1.7 GHz. PAE is still above 60% within the range 1.4-2 GHz.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; inductors; integrated circuit design; network topology; wideband amplifiers; 0.13 micron; 1.4 to 2 GHz; CMOS amplifier; MOS capacitive parasitics; cascode topology; device stress; efficiency; integrated inductor; wideband CMOS class-E power amplifier; wideband amplifier; Broadband amplifiers; CMOS technology; Circuit optimization; Inductors; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Stress; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489832

Filename

1489832