Title :
High-performance SiGe pMODFETs grown by UHV-CVD
Author :
Koester, S.J. ; Hammond, R. ; Chu, J.O. ; Ott, J.A. ; Mooney, P.M. ; Perraud, L. ; Jenkins, K.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
6/21/1905 12:00:00 AM
Abstract :
The fabrication and characterization of 0.1 μm-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge-Si 0.4Ge0.6 pMODFETs with peak extrinsic transconductance (gmax) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz. We have also investigated the performance of Si0.2Ge0.8-Si0.7Ge0.3 pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited DC transconductances as high as gmax=377 mS/mm, and had values of fT=49 GHz and fmax=95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si0.2Ge0.8-Si0.65Ge0.35 pMODFETs grown on high-p Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (Ga) of 18 dB (7.6 dB) at 3 GHz (18 GHz)
Keywords :
Ge-Si alloys; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 0.1 micron; 1.1 to 2.9 dB; 3 to 95 GHz; 377 mS/mm; 488 mS/mm; 7.6 to 18 dB; DC transconductance; Ge-Si0.4Ge0.6; HEMT; HF noise characterization; SOS substrates; Si; Si0.2Ge0.8-Si0.65Ge0.35 ; Si0.2Ge0.8-Si0.7Ge0.3; SiGe pMODFETs; UHV-CVD growth; UHV-CVD-grown heterostructures; characterization; fabrication; high-frequency noise; high-p Si substrates; p-channel MODFET; peak extrinsic transconductance; Buffer layers; Cutoff frequency; Fabrication; Germanium silicon alloys; HEMTs; III-V semiconductor materials; MODFETs; Silicon germanium; Sputter etching; Substrates;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821455
