Multi-mode, multi-band RF transceiver circuits for mobile terminals in deep-submicron CMOS processes

Circuit design techniques, architectures and characterization results for RF and analog circuits for multi-mode, multi-band single-chip RF transceivers are presented. Critical RF and analog design parameters are derived for direct conversion multi-mode transceivers based on UMTS and GSM/DCS/PCS standards. Discrete component specifications are derived based on the linearity and noise figure of the channel. A wideband, high dynamic range continuous-time baseband ΣΔ A/D converter, for fully integrated direct-conversion RF transceivers is presented. RF frequency synthesizers with multi-band VCOs, spanning more than 500 MHz center frequency range, and with low phase noise, are introduced.