Title :
Two-dimensional numerical device simulation for SOI MOSFETs
Author :
Iriye, Y. ; Ishizuka, Tatsumi
Author_Institution :
Fuyo Data Process. & Dev. Ltd., Tokyo, Japan
Abstract :
The use of a two-dimensional device simulator has been analyzed for SOI MOSFETs. The drain current kink effect and a phenomenon for substrate floating devices have been simulated. The governing equations have been solved numerically by a finite-difference method
Keywords :
insulated gate field effect transistors; semiconductor device models; 2D simulation; SOI MOSFETs; drain current kink effect; finite-difference method; numerical device simulation; substrate floating devices; two-dimensional device simulator; Difference equations; Electrons; Finite difference methods; Gradient methods; Linear systems; MOSFETs; Numerical simulation; Silicon; Sparse matrices; Spontaneous emission;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95417
