• DocumentCode
    1589702
  • Title

    Two-dimensional numerical device simulation for SOI MOSFETs

  • Author

    Iriye, Y. ; Ishizuka, Tatsumi

  • Author_Institution
    Fuyo Data Process. & Dev. Ltd., Tokyo, Japan
  • fYear
    1988
  • Firstpage
    43
  • Abstract
    The use of a two-dimensional device simulator has been analyzed for SOI MOSFETs. The drain current kink effect and a phenomenon for substrate floating devices have been simulated. The governing equations have been solved numerically by a finite-difference method
  • Keywords
    insulated gate field effect transistors; semiconductor device models; 2D simulation; SOI MOSFETs; drain current kink effect; finite-difference method; numerical device simulation; substrate floating devices; two-dimensional device simulator; Difference equations; Electrons; Finite difference methods; Gradient methods; Linear systems; MOSFETs; Numerical simulation; Silicon; Sparse matrices; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
  • Conference_Location
    St. Simons Island, GA
  • Type

    conf

  • DOI
    10.1109/SOI.1988.95417
  • Filename
    95417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1589702