• DocumentCode
    1589773
  • Title

    Fabrication and characterisation of Al0.23Ga0.77 N/GaN HFETs on MOVPE layers

  • Author

    Hughes, B.T. ; Parmiter, P.J. ; Birbeck, J.C. ; Hydes, A.J. ; Lee, D. ; Uren, M.J. ; Martin, T. ; Wallis, R.H.

  • Author_Institution
    DERA, Great Malvern, UK
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    59
  • Lastpage
    64
  • Abstract
    MOVPE has been used to grow 2D electron gas layers with concentration 8×1012 cm-2 and mobility 10 30 cm2/Vsec in a AlGaN/GaN heterostructure. Mesa isolated HFET devices have been fabricated using this material which show excellent isolation and highly encouraging characteristics suitable for power microwave applications
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; 2D electron gas layers; 2DEG layers; Al0.23Ga0.77N-GaN; AlGaN-GaN HFET; AlGaN/GaN heterostructure; MOVPE layers; characterisation; fabrication; mesa isolated HFET devices; power microwave applications; Aluminum gallium nitride; Conductivity; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium nitride; HEMTs; MODFETs; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-5298-X
  • Type

    conf

  • DOI
    10.1109/EDMO.1999.821460
  • Filename
    821460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1589773