The Sensing Performance of Undoped-AlGaN/GaN/Sapphire HEMT Hydrogen Gas Sensor

Author

Mohamad, Mazuina ; Meng, Fong Yee ; Hashim, Ahmad Mustafa

Author_Institution

Mater. Innovations & Nanoeleectronics Res. Group, Univ. Teknol. Malaysia, Johor Bahru

fYear

2008

Firstpage

985

Lastpage

986

Abstract

The hydrogen sensing characteristics of undoped- AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; high electron mobility transistors; hydrogen; circular Schottky diodes; high purity hydrogen gas; hydrogen concentration; hydrogen gas sensor; sensing performance; undoped-AlGaN/GaN/sapphire HEMT; Aluminum gallium nitride; Gallium nitride; Gas detectors; Gases; HEMTs; Hydrogen; Nitrogen; Schottky diodes; Temperature distribution; Temperature sensors; catalytic metal; sensor; wide bandgap;

fLanguage

English

Publisher

ieee

Conference_Titel

Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-0-7695-3136-6

Electronic_ISBN

978-0-7695-3136-6

Type

conf

DOI

10.1109/AMS.2008.184

Filename

4530610