DocumentCode
1590007
Title
Characterization of different IGBTs in ZVS commutation including parameter variation
Author
Claudio, A. ; Aguayo, J. ; Cotorogea, M.
Author_Institution
Centro Nacional de Investigacion y Desarrollo Tecnologico, Morelos, Mexico
Volume
2
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
600
Abstract
ZCS/ZVS techniques are used in order to increase frequency, reduce the weight and switching losses. Test circuits are commonly used for the characterization of devices. This work presents the characterization of IGBTs in ZVS conditions, considering parameter variations such as the current gradient, the gate voltage and the junction temperature
Keywords
circuit testing; commutation; insulated gate bipolar transistors; power semiconductor switches; 1200 V; 600 V; IGBT; ZCS; ZVS; ZVS commutation; circuit design; current gradient; frequency increase; gate voltage; junction temperature; parameter variations; switching losses reduction; test circuit; weight reduction; zero-voltage-switching; Circuit synthesis; Circuit testing; Insulated gate bipolar transistors; Power semiconductor switches; RLC circuits; Resonance; Switching circuits; Switching loss; Temperature; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location
Vancouver, BC
ISSN
0275-9306
Print_ISBN
0-7803-7067-8
Type
conf
DOI
10.1109/PESC.2001.954181
Filename
954181
Link To Document