Title :
Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device
Author :
Parimon, Norfarariyanti Bte ; Yusof, Siti Suhaila Bte Mohd ; Bin Hashim, A.M.
Author_Institution :
Mater. Innovations & Nano-Electron. (MINE) Group, Univ. Teknol. Malaysia, Skudai
Abstract :
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.
Keywords :
Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; rectennas; AlGaAs-GaAs; HEMT structure; Schottky diode; coplanar waveguide; rectenna device; Circuit simulation; DC generators; Gallium arsenide; HEMTs; Microwave devices; Microwave generation; Power generation; Power supplies; Rectennas; Schottky diodes; HEMT structure; IQ chip; Rectenna; Schottky diode;
Conference_Titel :
Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-0-7695-3136-6
Electronic_ISBN :
978-0-7695-3136-6
DOI :
10.1109/AMS.2008.187
