Soft-switching performances of 1200V new punch-through IGBT using local lifetime control at high temperature

Author

Azzopardi, S. ; Kawamura, A. ; Iwamoto, H.

Author_Institution

Bordeaux I Univ., Talence, France

Volume

2

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

606

Abstract

Soft-switching performances at high temperature of a 1200V new planar punch-through IGBT using local lifetime control are evaluated and compared with a conventional planar 1200V punch-through IGBT. Experimental investigations for ZVS and ZCS operating modes under various test conditions allow to establish comparative diagrams and graphs performances with conventional planar IGBT to give useful data for devices modeling, design and optimization

Keywords

insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; switching circuits; 1200 V; ZCS; ZVS; design; devices modeling; high-temperature performance; local lifetime control; operating modes; optimization; planar punch-through IGBT; soft-switching performances; test conditions; Circuit testing; Design optimization; Insulated gate bipolar transistors; Performance evaluation; Power semiconductor devices; Power semiconductor switches; Switching loss; Temperature control; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual

Conference_Location

Vancouver, BC

ISSN

0275-9306

Print_ISBN

0-7803-7067-8

Type

conf

DOI

10.1109/PESC.2001.954182

Filename

954182