Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film

Author

Bahari, Noorfozila ; Zain, Azlina Mohd ; Abdullah, Ali Zaini ; Sheng, Daniel Bien Chia ; Othman, Masuri

Author_Institution

Electr. Eng. Dept., Polytech. Sultan Haji Ahmad Shah, Kuantan, Malaysia

fYear

2010

Firstpage

76

Lastpage

78

Abstract

The pH-sensing properties of tantalum pentoxide (Ta₂O₅) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.

Keywords

ion sensitive field effect transistors; pH measurement; sensitivity; sputtering; tantalum compounds; thin films; C-V measurements; RF magnetron reactive sputtering method; ambient condition; capacitance-voltage measurements; pH sensitivity; pH-ISFET; silicon wafer; tantalum pentoxide thin film; temperature 400 degC; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Frequency measurement; Magnetic properties; Performance evaluation; Radio frequency; Semiconductor films; Silicon; Sputtering; RF magnetron sputtering; Tantalum pentoxide; pH-ISFET; sensing membrane;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-6608-5

Type

conf

DOI

10.1109/SMELEC.2010.5549429

Filename

5549429