Comparison of advanced transistor technologies with regard to their noise figures

Author

Pascht, A. ; Reimann, M. ; Berroth, M.

Author_Institution

Inst. for Electr. & Opt. Eng., Stuttgart Univ., Germany

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

125

Lastpage

130

Abstract

For the realisation of mobile communication products in the low GHz range a lot of different technologies are available. The well known GaAs technologies with MESFETs and heterostructures are in keen competition with Si and SiGe bipolar and latterly CMOS technologies. Some of these circuits, such as low noise amplifiers (LNA´s), require a optimisation for minimum noise figure. Thus an evaluation of the different technologies with regard to the noise figure is of great interest. This paper aims at classifying different technologies concerning their noise performance

Keywords

CMOS integrated circuits; MOSFET; equivalent circuits; germanium compounds; heterojunction bipolar transistors; minimisation; semiconductor device noise; semiconductor materials; silicon compounds; GaAs; GaAs technologies; MESFET; Si; SiGe; SiGe bipolar technology; heterostructures; latterly CMOS technology; low noise amplifiers; minimum noise figure; mobile communication products; noise figures; noise performance; optimisation; CMOS technology; Circuit noise; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; MESFETs; Mobile communication; Noise figure; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821472

Filename

821472