On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation

Author

Hutabarat, M.T. ; Webster, D.R. ; Haigh, D.G. ; Schreurs, D. ; van der Zanden, K. ; Edgar, D.L. ; Borsosfoldi, Z. ; Elgaid, K. ; Thayne, I.G. ; Parker, A.E.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

170

Lastpage

175

Abstract

This work describes an “on wafer” mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd order intermodulation performance than some GaAs MESFETs when used as resistive FET mixers. It is also shown that HEMTs give the same conversion loss of MESFETs with a significantly smaller gate width. Preliminary simulations with both table and empirical models were presented, showing that further work is required before CAD models can be used to successfully minimise 3rd order intermodulation distortion in resistive FET mixers

Keywords

HEMT circuits; III-V semiconductors; MESFET circuits; electric distortion measurement; gallium arsenide; intermodulation distortion; mixers (circuits); semiconductor device measurement; semiconductor device models; GaAs; GaAs MESFET; GaAs PHEMT; conversion loss; device model; intermodulation distortion; on-wafer measurement; resistive FET mixer; Distortion measurement; FETs; Gallium arsenide; HEMTs; Intermodulation distortion; MESFETs; MMICs; MODFETs; Semiconductor device modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821480

Filename

821480