Title :
Design and fabrication of SiO2/TiO2 dielectric Bragg reflectors by RF sputtering: application to near infrared InGaAs/GaAs/AlGaAs vertical cavity surface emitting laser
Author :
de la Fargue, M. ; Missous, M.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
6/21/1905 12:00:00 AM
Abstract :
We have designed and fabricated a SiO2/TiO2 dielectric Bragg reflector to use as a top mirror for a 490 nm vertical cavity surface emitting laser. The 490 nm emission is a result of second-harmonic generation from a fundamental emission at 980 nm. The design and fabrication by RF magnetron sputtering of the mirrors will be discussed and the reflectivity spectra as a function of number of layers will be shown
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; optical fabrication; optical harmonic generation; reflectivity; semiconductor lasers; silicon compounds; sputtered coatings; surface emitting lasers; titanium compounds; 490 nm; 980 nm; InGaAs-GaAs-AlGaAs; RF magnetron sputtering; SiO2-TiO2; SiO2/TiO2 dielectric Bragg reflector; design; fabrication; mirror; near-infrared InGaAs/GaAs/AlGaAs vertical cavity surface emitting laser; reflectivity spectra; second harmonic generation; Dielectric materials; Distributed Bragg reflectors; Fabrication; Mirrors; Optical films; Radio frequency; Reflectivity; Refractive index; Sputtering; Substrates;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821481
