DocumentCode :
1590369
Title :
A multi-phase 10 GHz VCO in CMOS/SOI for 40 Gbits/s SONET OC-768 clock and data recovery circuits
Author :
Axelrad, D. ; De Foucauld, E. ; Boasis, M. ; Martin, P. ; Vincent, P. ; Belleville, M. ; Gaffiot, F.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fYear :
2005
Firstpage :
573
Lastpage :
576
Abstract :
This paper presents the design of a multi-phase voltage-controlled oscillator (VCO) in CMOS/SOI technology, based on a ring amplifier with LC resonators. This circuit is a key block of a 40 Gbit/s serial communications system. Operating at a speed of one-fourth of the nominal data rate, this CMOS architecture complies with SONET OC-768 standard. The circuit exhibits a 25% frequency tuning range from 10.2 GHz to 13 GHz. The core power dissipation is 26 mW under a -1.2 V supply voltage. The single sideband phase noise measured is better than -104 dBc/Hz, at 1 MHz offset, over the frequency tuning range. The single-ended peak-to-peak amplitude of the four differential signals is 50 mV.
Keywords :
CMOS integrated circuits; SONET; microwave amplifiers; microwave oscillators; silicon-on-insulator; voltage-controlled oscillators; -1.2 V; 10.2 to 13 GHz; 26 mW; 40 Gbit/s; 50 mV; CMOS/SOI technology; LC resonators; SONET OC-768 clock; SONET OC-768 standard; data recovery circuits; multi-phase VCO; ring amplifier; serial communications system; voltage-controlled oscillator; CMOS technology; Circuit optimization; Clocks; Frequency measurement; Noise measurement; Phase noise; Power dissipation; SONET; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-8983-2
Type :
conf
DOI :
10.1109/RFIC.2005.1489878
Filename :
1489878
Link To Document :
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