The transformer characteristic resistance and its application to the performance analysis of silicon integrated transformers

In this paper a novel figure of merit for the rating of integrated transformers is presented. The proposed parameter provides a more reliable performance characterization compared to previously reported ones (i.e., insertion loss and maximum available gain), since it is inherently related to the maximization of the available output power in tuned-load RF circuits. The new figure of merit is used to evaluate the effect of different substrate management approaches on the performance of silicon integrated transformers.