DocumentCode
1590690
Title
A new kind of CMOS high frequency oscillators
Author
Petit, Gilles ; Kielbasa, Richard ; Petit, Vincent
Author_Institution
Supelec, Gif-sur-Yvette, France
fYear
2005
Firstpage
617
Lastpage
620
Abstract
The paper presents a new 6.5 GHz oscillator designed in a 0.5 μm silicon-on-sapphire CMOS technology. This new structure is based on the principle of frequency multiplication integrated in the same stage as the generator. The layout particularities of it are presented in the case of an 8.5 GHz fully integrated oscillator in the previous SOS technology that has an fT of 35 GHz. Given measurements results prove the functionality of our design.
Keywords
CMOS analogue integrated circuits; MMIC oscillators; frequency multipliers; integrated circuit design; nonlinear network synthesis; silicon-on-insulator; 0.5 micron; 6.5 GHz; 8.5 GHz; CMOS high frequency oscillators; frequency multiplication; fully integrated oscillator; silicon-on-sapphire CMOS technology; CMOS technology; Costs; Design methodology; Frequency conversion; Frequency synthesizers; Heart; Integrated circuit technology; Mass production; Microwave oscillators; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-8983-2
Type
conf
DOI
10.1109/RFIC.2005.1489889
Filename
1489889
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