DocumentCode
1590858
Title
Analytical thermal noise model suitable for circuit design using short-channel MOSFETs
Author
Jeon, Jongwook ; Kim, Seyoung ; Kang, In Man ; Han, Kwangsuk ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution
Seoul Nat. Univ., South Korea
fYear
2005
Firstpage
637
Lastpage
640
Abstract
The paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with measured noise parameter data.
Keywords
MOSFET; integrated circuit design; semiconductor device models; semiconductor device noise; thermal noise; CMOS devices; analytical thermal noise model; channel thermal noise model; circuit design; gate-induced model; linear region; saturation region; short-channel MOSFET; Analytical models; Circuit noise; Circuit synthesis; Integral equations; Integrated circuit noise; MOSFETs; Noise figure; Noise measurement; Semiconductor device modeling; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-8983-2
Type
conf
DOI
10.1109/RFIC.2005.1489894
Filename
1489894
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