Evaluation of 4H-SiC varactor diodes for microwave applications

Author

Wright, N.G. ; Knights, Andrew P. ; O´Neill, A.G. ; Johnson, C.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

301

Lastpage

306

Abstract

The suitability of SiC p-n junction and Schottky varactor diodes for high frequency applications is demonstrated. It is shown that such devices are capable of operating at high biases (over 130 V)-offering greater power density, impedance and operating temperature compared to conventional GaAs or Si varactors. The limitations induced by relatively high contact resistivities are evaluated in terms of applications at 10 GHz

Keywords

Schottky diodes; contact resistance; microwave diodes; power semiconductor diodes; silicon compounds; varactors; wide band gap semiconductors; 10 GHz; 130 V; 4H-SiC varactor diodes; Schottky varactor diodes; SiC; SiC p-n junction varactor diodes; high bias operation; high contact resistivities; high frequency applications; impedance; microwave applications; operating temperature; power density; Conductivity; Frequency; Gallium arsenide; Impedance; Microwave devices; P-n junctions; Schottky diodes; Silicon carbide; Temperature; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821502

Filename

821502