Title :
Evaluation of 4H-SiC varactor diodes for microwave applications
Author :
Wright, N.G. ; Knights, Andrew P. ; O´Neill, A.G. ; Johnson, C.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fDate :
6/21/1905 12:00:00 AM
Abstract :
The suitability of SiC p-n junction and Schottky varactor diodes for high frequency applications is demonstrated. It is shown that such devices are capable of operating at high biases (over 130 V)-offering greater power density, impedance and operating temperature compared to conventional GaAs or Si varactors. The limitations induced by relatively high contact resistivities are evaluated in terms of applications at 10 GHz
Keywords :
Schottky diodes; contact resistance; microwave diodes; power semiconductor diodes; silicon compounds; varactors; wide band gap semiconductors; 10 GHz; 130 V; 4H-SiC varactor diodes; Schottky varactor diodes; SiC; SiC p-n junction varactor diodes; high bias operation; high contact resistivities; high frequency applications; impedance; microwave applications; operating temperature; power density; Conductivity; Frequency; Gallium arsenide; Impedance; Microwave devices; P-n junctions; Schottky diodes; Silicon carbide; Temperature; Varactors;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821502
