Online junction temperature estimation for IGBT modules with paralleled semiconductor chips

Author

Sundaramoorthy, V.K. ; Bianda, E. ; Kamel, Michel ; Riedel, Gernot J. ; Nistor, I.

Author_Institution

Corp. Res., ABB Switzerland Ltd., Baden, Switzerland

fYear

2014

fDate

8-10 April 2014

Firstpage

1

Lastpage

5

Abstract

The paper presents methods for the online estimation of the junction temperature (Tj) for IGBT modules with paralleled semiconductor chips, with each chip operating at different junction temperatures. Experimental and simulation results are presented. The Tj estimated from the gate-emitter voltage (Vge) during the IGBT switch off process was found to be very close to the average junction temperature of all the semiconductor chips in the IGBT module. The Tj estimated from the dV_ce/dt slope at lower voltages was found to represent the highest temperature of all the semiconductor chips in the IGBT module.

Keywords

modules; power semiconductor switches; temperature measurement; IGBT module; IGBT switch off process; dVce/dt slope; gate-emitter voltage; online junction temperature estimation; parallel semiconductor chip; IGBT; Junction temperature; Miller capacitance; dVce/dt; gate-emitter voltage (Vge);

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on

Conference_Location

Manchester

Electronic_ISBN

978-1-84919-815-8

Type

conf

DOI

10.1049/cp.2014.0406

Filename

6836900