Title :
Genetic algorithm based extraction method for distributed small-signal model of GaN HEMTs
Author_Institution :
Comput. Eng. Dept., Hodeidah Univ., Hodeidah, Yemen
Abstract :
In this paper, an improved small-signal model parameter extraction method, using genetic algorithm (GA), is presented and implemented for GaN HEMT. The GA optimization is used to generate a high quality reliable starting values for the elements of distributed model. This value are then refined using local optimization technique to find optimal value for each model element. The developed extraction method is validated by simulating S-parameter measurements of a 8×125-μm gate width GaN HEMT over a wide bias range.
Keywords :
S-parameters; gallium compounds; genetic algorithms; high electron mobility transistors; semiconductor device models; GA optimization; S-parameter measurements; distributed small-signal model; gallium nitride HEMT; genetic algorithm; small-signal model parameter extraction method; Capacitance; Electrical resistance measurement; Frequency measurement; Gallium nitride; Genetic algorithms; HEMTs; MODFETs; Optimization methods; Parameter extraction; Scattering parameters;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549476
