Title :
Cross-sectional TEM studies of heavily boron-doped silicon
Author :
Ning, X.J. ; Pirouz, P. ; Mehregany, Mehran ; Chu, W.
Author_Institution :
Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.<>
Keywords :
boron; chemical interdiffusion; dislocation structure; elemental semiconductors; heavily doped semiconductors; impurity-dislocation interactions; interface structure; silicon; transmission electron microscope examination of materials; B/sub 2/O/sub 3/SiO/sub 2/-Si:B; Si:B; SiO/sub 2/-Si:B; borosilicate glass; cross-sectional transmission electron microscopy; dislocation configurations; doping induced dislocations; elemental semiconductor; heavily doped; microstructure; oxide/p/sup +/ interface; phase contrast; roughness; strain contrast; surface layer; thermally oxidized; Boron; Capacitive sensors; Electron microscopy; Glass; Materials science and technology; Mechanical factors; Microstructure; Silicon; Thermal stresses; Transmission electron microscopy;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148992
