Cross-sectional TEM studies of heavily boron-doped silicon

Author

Ning, X.J. ; Pirouz, P. ; Mehregany, Mehran ; Chu, W.

Author_Institution

Case Western Reserve Univ., Cleveland, OH, USA

fYear

1991

Firstpage

755

Lastpage

758

Abstract

The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.<>

Keywords

boron; chemical interdiffusion; dislocation structure; elemental semiconductors; heavily doped semiconductors; impurity-dislocation interactions; interface structure; silicon; transmission electron microscope examination of materials; B/sub 2/O/sub 3/SiO/sub 2/-Si:B; Si:B; SiO/sub 2/-Si:B; borosilicate glass; cross-sectional transmission electron microscopy; dislocation configurations; doping induced dislocations; elemental semiconductor; heavily doped; microstructure; oxide/p/sup +/ interface; phase contrast; roughness; strain contrast; surface layer; thermally oxidized; Boron; Capacitive sensors; Electron microscopy; Glass; Materials science and technology; Mechanical factors; Microstructure; Silicon; Thermal stresses; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148992

Filename

148992