DocumentCode :
1591598
Title :
Strain cancellation by indium incorporation for the calibration of nitrogen fractions in GaAsN
Author :
Hashim, H. ; Usher, B.F.
Author_Institution :
Dept. of Electron. Eng., La Trobe Univ., VIC, Australia
fYear :
2010
Firstpage :
8
Lastpage :
11
Abstract :
This paper reports a study of strain cancellation by adding indium to GaAs1-yNy epitaxial layers as a method of calibrating the nitrogen fraction y. The aim was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy layer with the same nitrogen content when grown on a GaAs substrate. This is an alternative to asserting nitrogen fractions in GaAs1-yNy layers on the basis of x-ray measurements, when the values and linearity of lattice and elastic constants with nitrogen composition y has not been established. The GaAs1-yNy and InxGa1-xAs1-yNy layers were grown on GaAs (001) substrates using molecular beam epitaxy with an electron cyclotron resonance nitrogen plasma source. Layers have been assessed by high-resolution x-ray diffraction to determine the relationship between the lattice constant of the GaAs1-yNy layer and the fraction x of In required to exactly cancel the strain.
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; lattice constants; semiconductor epitaxial layers; semiconductor quantum wells; wide band gap semiconductors; GaAs; GaAs (001) substrates; GaAs1-yNy; InxGa1-xAs1-yNy; InGaAs-GaAs; electron cyclotron resonance nitrogen plasma source; epitaxial layers; high-resolution X-ray diffraction; indium incorporation; lattice constant; molecular beam epitaxy; nitrogen composition; nitrogen fraction calibration; strain cancellation; Calibration; Capacitive sensors; Epitaxial layers; Gallium arsenide; Indium; Lattices; Linearity; Molecular beam epitaxial growth; Nitrogen; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
Type :
conf
DOI :
10.1109/SMELEC.2010.5549495
Filename :
5549495
Link To Document :
بازگشت