Title :
Advanced 1.3 µm vertical cavity lasers based on AlInGaAs/InP-AlGaAs/GaAs fused structures
Author :
Sirbu, A. ; Iakovlev, V. ; Keller, S.T. ; Mereuta, A. ; Caliman, A. ; Kapon, E.
Author_Institution :
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
We report on recent status of vertical cavity lasers emitting in the 1.3 μm waveband comprising AlInGaAs/InP active regions wafer fused to Al(Ga)As/GaAs distributed Bragg reflectors. This technique produces vertical cavity surface emitting lasers (VCSELs) emitting in 4 channels of the 1310 nm coarse wavelength division multiplexing band that enabled a new generation of transceivers operating at 40 Gbps over 2 km of standard single mode fiber with a power consumption as low as 1 W and vertical external cavity surface emitting lasers (VECSELs) with record output power of 8.5 W.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; optical fibre communication; surface emitting lasers; wavelength division multiplexing; AlInGaAs-InP-AlGaAs-GaAs; active regions; distance 2 km; distributed Bragg reflectors; fused structures; power 8.5 W; power consumption; standard single mode fiber; transceivers; vertical cavity surface emitting lasers; wavelength 1.3 mum; wavelength division multiplexing; Cavity resonators; Distributed Bragg reflectors; Gallium arsenide; Optical pumping; Power generation; Vertical cavity surface emitting lasers; fiber-optic communication; long-wavelength VCSELs; long-wavelength VECSELs; wafer fusion VCSEL technology;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193551
