Title :
Slotted capacitive microphone with sputtered aluminum diaphragm and photoresist sacrificial layer
Author :
Ganji, Bahram Azizollah ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
Abstract :
In this paper, we have fabricated a new microphone using aluminum (Al) slotted perforated diaphragm and back plate electrode, and photoresist (AZ1500) sacrificial layer on silicon wafer. The novelty of this method relies on aluminum diaphragm includes some slots to reduce the effect of residual stress and stiffness of diaphragm for increasing the microphone sensitivity. The acoustic holes are made on diaphragm to reduce the air damping, and avoid the disadvantages of non standard silicon processing for making back chamber and holes in back plate, which are more complex and expensive. Photoresist sacrificial layer is easy to deposition by spin coater and also easy to release by acetone. Moreover, acetone has a high selectivity to resist compared to silicon oxide and Al, thus it completely removes sacrificial resist without incurring significant damage silicon oxide and Al. The measured zero bias capacitance is 17.5 pF, and its pull-in voltage is 25 V. The microphone has been tested with external amplifier and speaker, the external amplifier was able to detect the sound waves from microphone on speaker and oscilloscope. The maximum amplitude of output speech signal of amplifier is 45 mV, and the maximum output of MEMS microphone is 1.125 μV.
Keywords :
capacitive sensors; diaphragms; micromechanical devices; microphones; photoresists; MEMS microphone; acetone; acoustic holes; air damping; back plate electrode; back plate holes; diaphragm stiffness; microphone sensitivity; nonstandard silicon processing; output speech signal; photoresist sacrificial layer; pull-in voltage; residual stress; silicon oxide; silicon wafer; slotted capacitive microphone; slotted perforated diaphragm; sound wave detection; spin coater; sputtered aluminum diaphragm; zero bias capacitance; Aluminum; Capacitance measurement; Damping; Electrodes; Loudspeakers; Microphones; Residual stresses; Resists; Silicon; Voltage;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549497